共 50 条
- [1] CHARACTERIZATION OF SWIRL DEFECTS IN FLOATING-ZONE SILICON-CRYSTALS[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 30 (01) : 117 - 124PETROFF, PMDEKOCK, AJR
- [2] CHARACTERIZATION OF SWIRL DEFECTS IN DISLOCATION-FREE SILICON-CRYSTALS[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : C81 - C81KOCK, AJRDPETROFF, P
- [3] THE EFFECT OF DOPING ON THE FORMATION OF SWIRL DEFECTS IN DISLOCATION-FREE CZOCHRALSKI-GROWN SILICON-CRYSTALS[J]. JOURNAL OF CRYSTAL GROWTH, 1980, 49 (04) : 718 - 734DEKOCK, AJRVANDEWIJGERT, WM
- [4] MECHANICAL MICROSTRESSES IN DISLOCATION-FREE FLOATING-ZONE SILICON MONOCRYSTALS[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 106 (02): : 363 - 369GORSHKOV, VGDANILEIKO, YKOSIKO, VVSIDORIN, AVVESELOVSKAYA, NVDANKOVSKII, YVSHKLYAR, BL
- [5] INVESTIGATIONS FOR THE IMPROVEMENT OF THE RADIAL DOPING HOMOGENEITY OF DISLOCATION-FREE FLOATING ZONE SILICON-CRYSTALS[J]. CRYSTAL RESEARCH AND TECHNOLOGY, 1989, 24 (01) : 3 - 12SCHRODER, WROST, HJWOLF, E
- [6] FORMATION AND ELIMINATION OF GROWTH STRIATIONS IN DISLOCATION-FREE SILICON-CRYSTALS[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 28 (01) : 125 - 137KOCK, AJRDROKSNOER, PJBOONEN, PGT
- [7] CONDITIONS OF VIOLATION OF DISLOCATION-FREE GROWTH AND STABILITY OF THE MELTED ZONE IN GROWING SILICON-CRYSTALS BY FLOATING ZONE TECHNIQUE[J]. KRISTALLOGRAFIYA, 1989, 34 (01): : 208 - 214BUZYNIN, ANZAICHKO, VVOSIKO, VVTATARINTSEV, VM
- [8] GROWTH OF DISLOCATION-FREE BULK SILICON-CRYSTALS[J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1983, 6 (01): : 25 - 46BAGAI, RKBORLE, WN
- [9] THE DISTRIBUTION OF A-TYPE MICRODEFECTS IN DISLOCATION-FREE SILICON SINGLE-CRYSTALS GROWN BY THE FLOATING-ZONE METHOD[J]. KRISTALLOGRAFIYA, 1983, 28 (06): : 1222 - 1224DOBROVENSKY, VVNOVIKOV, AGTRIPOSHINA, NAFOMIN, VGSHCHEGOLKOVA, LA
- [10] SWIRL DEFECT FORMATION IN DISLOCATION-FREE SILICON SINGLE-CRYSTALS[J]. FIZIKA TVERDOGO TELA, 1983, 25 (09): : 2842 - 2844OSOVSKII, MIFALKEVICH, ESCHERVONYI, IF