TIME-RESOLVED INVESTIGATION OF LO-PHONON DYNAMICS IN SEMIINSULATING AND N-TYPE GAAS

被引：0
|
作者：
BOGANI, F
VALLEE, F
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1992年 / 126期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
By means of time-resolved Coherent Anti-Stokes Raman Scattering we investigate the LO phonon dynamics in semi-insulating and n-doped GaAs crystals. The processes giving rise to the relaxation of the LO phonon are determined from the measured temperature dependence of its dephasing rate. The influence of an electron plasma on the LO phonon dynamics is investigated in n-doped GaAs samples; we find, in the investigated range of doping, an increasing of the, dephasing proportional to the plasma density.
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页码：203 / 206
页数：4
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