ELECTRICAL-PROPERTIES OF THIN HIGH-DIELECTRIC TA2O5 FILMS

被引：10
|
作者：
RAUSCH, N [1 ]
BURTE, EP [1 ]
机构：
[1] FRAUNHOFER INST INTEGRIERTE SCHALTUNGEN,D-91058 ERLANGEN,GERMANY
来源：
MICROELECTRONICS JOURNAL | 1994年 / 25卷 / 07期
关键词：
D O I：
10.1016/0026-2692(94)90038-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrical properties and the conduction mechanisms of leakage current in tantalum pentoxide (Ta2O5) prepared by a low pressure metal organic chemical vapour deposition (LPMOCVD) process have been studied. After deposition, the films have been annealed at temperatures up to 900 degrees C in oxygen and nitrogen ambient. The conduction mechanisms in polycrystalline Ta2O5 films are discussed.
引用
收藏
页码：533 / 537
页数：5
相关论文
共 50 条
  • [1] DIELECTRIC PROPERTIES OF THIN TA2O5 FILMS
    MARTINEZDUART, JM
    VELILLA, JL
    ALBELLA, JM
    RUEDA, F
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 26 (02): : 611 - 615
  • [2] DIELECTRIC PROPERTIES OF TA2O5 THIN FILMS
    PULFREY, DL
    WILCOX, PS
    YOUNG, L
    [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 3891 - &
  • [3] Electrical properties of Ta2O5 thin films deposited on Ta
    Ezhilvalavan, S
    Tseng, TY
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (17) : 2477 - 2479
  • [4] Enhanced dielectric properties of modified Ta2O5 thin films
    Desu, CS
    Joshi, PC
    Desu, SB
    [J]. MATERIALS RESEARCH INNOVATIONS, 1999, 2 (05) : 299 - 302
  • [5] Ta2O5 thin films with exceptionally high dielectric constant
    Lin, J
    Masaaki, N
    Tsukune, A
    Yamada, M
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (16) : 2370 - 2372
  • [6] Electrical properties of Ta2O5 thin films deposited on Cu
    Ezhilvalavan, S
    Tseng, TY
    [J]. THIN SOLID FILMS, 2000, 360 (1-2) : 268 - 273
  • [7] In-situ low temperature N2O plasma annealing for high-dielectric Ta2O5 thin films
    Um, MY
    Lee, SK
    Kim, HJ
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S791 - S794
  • [8] Electrical properties of thin SiON/Ta2O5 gate dielectric stacks
    Houssa, M
    Degraeve, R
    Mertens, PW
    Heyns, MM
    Jeon, JS
    Halliyal, A
    Ogle, B
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) : 6462 - 6467
  • [9] TREATMENT OF DEFECTS IN THIN TA2O5 DIELECTRIC FILMS
    MOTOSHKIN, VV
    MUKHACHOV, VA
    MILLER, AA
    [J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1979, (06): : 96 - 98
  • [10] Electrical properties of thin Ta2O5 films obtained by thermal oxidation of Ta on Si
    Atanassova, E
    Spassov, D
    [J]. 1997 21ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS - PROCEEDINGS, VOLS 1 AND 2, 1997, : 613 - 616
12345