AN EMBEDDED STRIPE BE-IMPLANTED GAAS GAALAS DOUBLE HETEROSTRUCTURE LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：1

作者：

FEKETE, D ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 09期

关键词：

D O I：

10.1063/1.95463

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：927 / 929

页数：3

共 50 条

[1] BE-IMPLANTED GAAS GAALAS DOUBLE HETEROSTRUCTURE STRIPE GEOMETRY LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
SHTRIKMAN, H
FEKETE, D
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (05) : 1298 - 1300
[2] UNIFORMITY OF AN EMBEDDED STRIPE LARGE OPTICAL-CAVITY GAAS/GAALAS DOUBLE-HETEROSTRUCTURE LASER GROWN BY METALLOORGANIC CHEMICAL VAPOR-DEPOSITION
FEKETE, D
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) : 1028 - 1030
[3] CURRENT THRESHOLD UNIFORMITY OF SHALLOW PROTON STRIPE GAALAS DOUBLE HETEROSTRUCTURE LASERS GROWN BY METALORGANIC-CHEMICAL VAPOR-DEPOSITION
BURNHAM, RD
SCIFRES, DR
STREIFER, W
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 118 - 119
[4] UNIFORMITY OF QUANTUM WELL HETEROSTRUCTURE GAALAS LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
SCIFRES, DR
BURNHAM, RD
BERNSTEIN, M
CHUNG, H
ENDICOTT, F
MOSBY, W
TRAMONTANA, J
WALKER, J
YINGLING, RD
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 501 - 504
[5] HIGH-EFFICIENCY, LOW-THRESHOLD, ZN-DIFFUSED NARROW STRIPE GAAS/GAALAS DOUBLE HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
HONG, CS
COLEMAN, JJ
DAPKUS, PD
LIU, YZ
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (03) : 208 - 210
[6] NONPLANAR GAAS/GAALAS LASERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
BURNHAM, RD
FEKETE, D
SCIFRES, DR
STREIFER, W
[J]. PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1981, 272 : 84 - 86
[7] CHARACTERIZATION OF SILICON IMPLANTED GAAS BUFFER LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
KUECH, TF
POTEMSKI, R
CHAPPELL, TI
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1196 - 1203
[8] MESA WAVE-GUIDE GAAS-GAALAS INJECTION-LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
SCIFRES, DR
BURNHAM, RD
STREIFER, W
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 915 - 917
[9] GAAS/GAALAS QUANTUM-WELL LASER WITH A LATERAL SPATIAL VARIATION IN THICKNESS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
FEKETE, D
BOUR, D
BALLANTYNE, JM
EASTMAN, LF
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (11) : 635 - 637
[10] GAINP/ALGAINP DOUBLE-HETEROSTRUCTURE LASER GROWN ON A (111)B-ORIENTED GAAS SUBSTRATE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
IKEDA, M
MORITA, E
TODA, A
YAMAMOTO, T
KANEKO, K
[J]. ELECTRONICS LETTERS, 1988, 24 (17) : 1094 - 1095

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