MECHANISM FOR LO-PHONON TEMPERATURE OVERSHOOT IN GAAS

被引：4
|
作者：
REGO, LGC
ALGARTE, ACS
机构：
[1] Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, Unicamp, 13083-970 Campinas, Sao Paulo
来源：
PHYSICAL REVIEW B | 1994年 / 49卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.49.7257
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Carrier relaxation and LO-phonon dynamics are investigated in GaAs crystals illuminated by picosecond laser pulses. It is evidenced that an overshoot of the LO-phonon quasitemperature above the electron quasitemperature can occur in the absence of intervalley scattering. This effect is ascribed to the screening of the polar optical interaction.
引用
收藏
页码：7257 / 7261
页数：5
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