MEASUREMENT OF THE MINORITY-CARRIER LIFETIME AND INJECTION EFFICIENCY IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：4

作者：

CHAND, N

FISCHER, R

HENDERSON, T

MORKOC, H

NEUGROSCHEL, A

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 05期

关键词：

D O I：

10.1063/1.96554

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：367 / 369

页数：3

共 50 条

[1] DISLOCATION-STRUCTURE, FORMATION, AND MINORITY-CARRIER RECOMBINATION IN ALGAAS/INGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
FITZGERALD, EA
AST, DG
ASHIZAWA, Y
AKBAR, S
EASTMAN, LF
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (05) : 2473 - 2487
[2] MEASUREMENT OF THE MINORITY-CARRIER MOBILITY IN THE BASE OF HETEROJUNCTION BIPOLAR-TRANSISTORS USING A MAGNETOTRANSPORT METHOD
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RITTER, D
BAHIR, G
COHEN, S
SPERLING, J
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (13) : 1883 - 1884
[3] INFLUENCE OF MINORITY HOLE INJECTION ON CURRENT GAIN CHARACTERISTICS IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
ITO, H
NAGATA, K
NAKAJIMA, O
ISHIBASHI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (10A): : L1389 - L1392
[4] MINORITY ELECTRON-MOBILITY AND LIFETIME IN THE P+GAAS BASE OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
KIM, DM
LEE, S
NATHAN, MI
GOPINATH, A
WILLIAMSON, F
BEYZAVI, K
GHIASI, A
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (08) : 861 - 863
[5] PHOTOLUMINESCENCE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
EDA, K
INADA, M
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) : 4236 - 4243
[6] MINORITY-CARRIER LIFETIME MEASUREMENT IN GAAS
PENCE, IW
GREILING, PT
[J]. PROCEEDINGS OF THE IEEE, 1974, 62 (07) : 1030 - 1031
[7] IMPROVED MINORITY-CARRIER LIFETIME IN SI/SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY
HIGASHI, GS
BEAN, JC
BUESCHER, C
YADVISH, R
TEMKIN, H
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (25) : 2560 - 2562
[8] NEGATIVE TRANSCONDUCTANCE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
NOZU, T
OBARA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (11): : 2376 - 2380
[9] FABRICATION AND CHARACTERIZATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
ITO, H
ISHIBASHI, T
SUGETA, T
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 224 - 229
[10] ORIENTATION EFFECT ON ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
ISHIDA, H
UEDA, D
[J]. IEEE ELECTRON DEVICE LETTERS, 1995, 16 (10) : 448 - 450

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