NEGATIVE RESISTANCE DIODES IN SILICON CARBIDE

被引：0

作者：

RUTZ, RF

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1964.15408

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：533 / &

共 50 条

[1] NEGATIVE RESISTANCE TUNNEL DIODES IN SILICON CARBIDE
RUTZ, RF
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (05) : 539 - &
[2] NEGATIVE-RESISTANCE DIODES MADE OF SILICON CARBIDE
DUISENBA.M
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (07): : 1163 - &
[3] NEGATIVE RESISTANCE IN COMPENSATED SILICON DIODES
CHINO, KI
ARIYOSHI, H
MIZUSHIMA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (06) : 813 - +
[4] SILICON NEGATIVE-RESISTANCE DIODES
MIGITAKA, M
[J]. ELECTRONICS & COMMUNICATIONS IN JAPAN, 1966, 49 (05): : 89 - &
[5] NEGATIVE DIFFERENTIAL RESISTANCE OF SILICON CARBIDE CRYSTALS
CHIRKIN, LK
[J]. SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (07): : 1787 - +
[6] NEGATIVE RESISTANCE IN SILICON POINT CONTACT DIODES
ISHIKURA, O
MIYOSHI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (03) : 294 - &
[7] Silicon carbide diodes
不详
[J]. AMERICAN CERAMIC SOCIETY BULLETIN, 2003, 82 (01): : 11 - 11
[8] NEGATIVE DIFFERENTIAL RESISTANCE AND INDUCTIVE EFFECTS IN SILICON CARBIDE
ADIROVIC.EI
MIRSAGAT.SA
MOROZKIN, VV
[J]. SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (11): : 2692 - &
[9] CADMIUM-DOPED SILICON DIODES WITH NEGATIVE RESISTANCE
LEBDEV, AA
SULTANOV, NA
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (12): : 1543 - &
[10] ZINC-COMPENSATED SILICON DIODES WITH NEGATIVE RESISTANCE
LEBEDEV, AA
SULTANOV, NA
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (10): : 1295 - &