CMOS ON BURIED NITRIDE - A VLSI SOI TECHNOLOGY

被引：51
|
作者：
ZIMMER, G
VOGT, H
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 11期
关键词：
D O I：
10.1109/T-ED.1983.21331
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1515 / 1520
页数：6
相关论文
共 50 条
  • [1] SOI DESIGN FOR COMPETITIVE CMOS VLSI
    FOSSUM, JG
    CHOI, JY
    SUNDARESAN, R
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) : 724 - 729
  • [2] CAD issues for CMOS VLSI design in SOI
    Shepard, KL
    [J]. INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, PROCEEDINGS, 2001, : 105 - 110
  • [3] A VLSI design methodology for SOI technology
    Allen, DH
    [J]. 2004 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2004, : 5 - 8
  • [4] PERFORMANCE OF BURIED NITRIDE CMOS DEVICES
    ZIMMER, G
    VOGT, H
    NEUBERT, E
    STAKS, P
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1606 - 1607
  • [5] DIRECTION OF VLSI CMOS TECHNOLOGY
    NISHI, Y
    [J]. HEWLETT-PACKARD JOURNAL, 1987, 38 (06): : 24 - 25
  • [6] ADVANCED CMOS TECHNOLOGY FOR VLSI
    SAKAI, Y
    HASHIMOTO, N
    MINATO, O
    MASUHARA, T
    [J]. JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS, 1983, 8 : 97 - 112
  • [7] CMOS - THE EMERGING VLSI TECHNOLOGY
    CHEN, JY
    [J]. IEEE CIRCUITS & DEVICES, 1986, 2 (02): : 16 - 31
  • [8] SOI for digital CMOS VLSI: Design considerations and advances
    Chuang, CT
    Lu, PF
    Anderson, CJ
    [J]. PROCEEDINGS OF THE IEEE, 1998, 86 (04) : 689 - 720
  • [9] VLSI MATERIALS - A COMPARISON BETWEEN BURIED OXIDE SOI AND SOS
    HAMDI, AH
    MCDANIEL, FD
    PINIZZOTTO, RF
    MATTESON, S
    LAM, HW
    MALHI, SDS
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (02) : 1722 - 1725
  • [10] A HIGH-SPEED, LOW-POWER BURIED-OXIDE SOI CMOS TECHNOLOGY
    COLINGE, JP
    KAMINS, TI
    CHIANG, SY
    LIU, D
    PENG, S
    RISSMAN, P
    HASHIMOTO, K
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1842 - 1842
12345