ELECTRICAL CHARACTERISTICS OF A DARK-FIELD LAYER FOR THIN-FILM EL DEVICES

被引：0
|
作者：
PLUMB, JL [1 ]
机构：
[1] GTE PROD CORP,ELECT PROD,SALEM,MA 01970
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C341 / C341
页数：1
相关论文
共 50 条
  • [1] Electrical characteristics of ZnF2:Gd thin-film UV-EL devices
    Minemoto, Takashi
    Kimura, Yusuke
    Okubo, Yuji
    Takakura, Hideyuki
    Hamakawa, Yoshihiro
    [J]. IDMC 05: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2005, 2005, : 550 - 552
  • [2] RECENT PROGRESS IN THIN-FILM EL DEVICES
    HAMAKAWA, Y
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C490 - C490
  • [3] ELECTRICAL AND OPTICAL CHARACTERISTICS OF THIN-FILM ELECTROLUMINESCENT DEVICES AND DEVICE MODELS
    SMITH, DH
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1850 - 1851
  • [4] REASONS AND IMPLICATIONS OF ASYMMETRIES IN THIN-FILM EL DEVICES
    MACH, R
    MULLER, GO
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1994, 144 (02): : 493 - 499
  • [5] Electrical characterization of thin-film electroluminescent devices
    Wager, JF
    Keir, PD
    [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1997, 27 : 223 - 248
  • [6] A method to determine the Young's modulus of thin-film elements assisted by dark-field electron holography
    Reboh, S.
    Benzo, P.
    Morin, P.
    Cours, R.
    Hytch, M. J.
    Claverie, A.
    [J]. APPLIED PHYSICS LETTERS, 2013, 102 (05)
  • [7] Fringe Field Effect on Electrical Characteristics of Pentacene Thin-Film Transistors
    Park, Jaehoon
    Zhang, Xue
    Bae, Moo-Ho
    Park, Gyeong-Tae
    Bae, Jin-Hyuk
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (11)
  • [8] Offset of the electrical characteristics of alternating-current thin-film electroluminescent devices
    Shih, S
    Keir, PD
    Hitt, J
    Wager, JF
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (13) : 1921 - 1923
  • [9] Modeling electrical characteristics of thin-film field-effect transistors III. Normally-on devices
    Stallinga, P.
    Gomes, H. L.
    [J]. SYNTHETIC METALS, 2008, 158 (11) : 473 - 478
  • [10] LUMINESCENCE CHARACTERISTICS OF THIN-FILM ELECTROLUMINESCENT DEVICES
    OGAWA, M
    NAKADA, S
    YOSHIOKA, T
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : C326 - C326
12345