SCANNING TUNNELING MICROSCOPY COMPARISON OF GAAS(001) VICINAL SURFACES GROWN BY MOLECULAR-BEAM EPITAXY

被引：164
|
作者：
PASHLEY, MD
HABERERN, KW
GAINES, JM
机构：
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 04期
关键词：
D O I：
10.1063/1.104649
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the first scanning tunneling microscope observations of molecular beam epitaxy grown GaAs(001) vicinal surfaces cut 2-degrees towards (111)A and 2-degrees towards (111)B. The A-type step edges are found to be relatively straight, with 16 angstrom kinks occurring typically every 100 angstrom along the step. In contrast, the B-type step edges are found to be very ragged. On both surfaces, the terrace widths varied considerably. The details of the two step structures are dominated by the structure of the (2X4) unit cells.
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页码：406 / 408
页数：3
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