PHOTOREFLECTION STUDY ON THE SURFACE ELECTRIC-FIELD OF DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：14
|
作者：
LIU, DG [1 ]
CHANG, KH [1 ]
LEE, CP [1 ]
HSU, TM [1 ]
TIEN, YC [1 ]
机构：
[1] NATL CENT UNIV,DEPT PHYS,CHUNGLI,TAIWAN
来源：
JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 04期
关键词：
D O I：
10.1063/1.351710
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photoreflectance spectroscopy has been used to study the surface electric-field strength and the surface potential of delta-doped GaAs. Franz-Keldysh oscillations in the reflectance spectra were clearly observed and the oscillation periods were used to calculate the internal electric fields of the delta-doped samples. Based on the measured results and the self-consistent calculation, a surface potential of 0.6 eV is obtained.
引用
收藏
页码：1468 / 1472
页数：5
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