LATERAL TUNNELING IN POINT CONTACTS

被引：22
|
作者：
BEVER, T
WIECK, AD
VONKLITZING, K
PLOOG, K
机构：
[1] Max-Planck-Institut F̈r Festkörperforschung, D-7000 Stuttgart 80
来源：
PHYSICAL REVIEW B | 1991年 / 44卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.44.3424
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The Shubnikov-de Haas oscillations of the resistance of a point contact formed in the two-dimensional electron gas of Al(x)Ga(1-x)As/GaAs heterostructures via the lateral field effect are investigated for a series of values of the confining gate voltage V(g). Giant magnetoresistance oscillations are observed for values of V(g) close to the threshold voltage. An analysis of the differential channel resistance dV/dI as a function of the voltage drop V over the point contact shows that these oscillations are due to lateral tunneling through the point contact.
引用
收藏
页码：3424 / 3427
页数：4
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