SOME ASPECTS ON INTERFACE MODES AND LO EIGENMODES IN GAAS/ALAS QUANTUM-WELLS

被引：9
|
作者：
CHEN, CD
机构：
[1] Institute of Semiconductors, Academia Sinica, 912 Beijing, P.O. Box
来源：
SOLID STATE COMMUNICATIONS | 1992年 / 81卷 / 09期
关键词：
D O I：
10.1016/0038-1098(92)90789-C
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The interface modes and LO phonon modes in GaAs/AlAs quantum wells is investigated within the isotropic dispersionless dielectric continuum with nodes in displacement u at the interfaces as boundary condition. The interface modes are found to be purely interface polarization charge effect while LO eigenmodes induce only bulk polarization charges. Analytical expression is determined for LO eigenmodes and is found in good agreement with realistic model calculation, and its labeling index is interpreted as the helicity of electric field as it travels from one side to the other side of the slab.
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页码：785 / 788
页数：4
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