MONTE-CARLO SIMULATION FOR THE ION-IMPLANTATION OF SILICIDE HETEROSTRUCTURES

被引：2
|
作者：
CHANG, CL [1 ]
YANG, JR [1 ]
JUH, TL [1 ]
机构：
[1] NATL TSING HUA UNIV,DEPT PHYS,HSINCHU 300,TAIWAN
来源：
JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 06期
关键词：
D O I：
10.1063/1.345448
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A Monte Carlo simulation is used to solve the ion-implantation process with three-dimensional boundaries. The projected range, standard deviation, skewness, kurtosis, and damage distributions after ion implanation for TiSi 2 heterostructures and the feasibility of the silicide doping process are simulated in this work.
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页码：2810 / 2814
页数：5
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