SATURATION-MODE CMOS TRANSCONDUCTOR WITH ENHANCED TUNABILITY AND LOW DISTORTION

被引：4
|
作者：
WILSON, G
CHAN, PK
机构：
[1] Polytechnic South West, School of Electronic Communication and Electrical Engineering, Drake Circus, Plymouth
来源：
ELECTRONICS LETTERS | 1991年 / 27卷 / 01期
关键词：
CIRCUIT DESIGN; COUPLED CIRCUITS;
D O I：
10.1049/el:19910019
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new transconductor based on MOS transistors operating in saturation is presented. Linearisation is based on an offset biased pair in a cross-coupled configuration. Simulation results show that the proposed convertor combines excellent tuning characteristics with a large signal handling capability.
引用
收藏
页码：27 / 29
页数：3
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