Novel 700 V high-voltage SOI LDMOS structure with folded drift region

被引:1
|
作者
Li Qi [1 ,2 ]
Li Haiou [1 ]
Zhai Jianghui [1 ]
Tang Ning [1 ]
机构
[1] Guilin Univ Elect Technol, Guangxi Expt Ctr Informat Sci, Guilin 541004, Peoples R China
[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
folded drift region; breakdown voltage; interdigital oxide layer; electric field modulation;
D O I
10.1088/1674-4926/36/2/024008
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A new high-voltage LDMOS with folded drift region (FDR LDMOS) is proposed. The drift region is folded by introducing the interdigital oxide layer in the Si active layer, the result of which is that the effective length of the drift region is increased significantly. The breakdown characteristic has been improved by the shielding effect of the electric field from the holes accumulated in the surface of the device and the buried oxide layer. The numerical results indicate that the breakdown voltage of 700 V is obtained in the proposed device in comparison to 300 V of conventional LDMOS, while maintaining low on-resistance.
引用
收藏
页数:5
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