CONDUCTION-BAND DENSITY OF STATES IN HYDROGENATED AMORPHOUS-SILICON DETERMINED BY INVERSE PHOTOEMISSION

被引：40
|
作者：
JACKSON, WB
OH, SJ
TSAI, CC
ALLEN, JW
机构：
来源：
PHYSICAL REVIEW LETTERS | 1984年 / 53卷 / 15期
关键词：
D O I：
10.1103/PhysRevLett.53.1481
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1481 / 1484
页数：4
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