ANALYSIS OF ORGANIC CONTAMINATIONS ON SI(100) BY THERMAL-DESORPTION SPECTROSCOPY

被引：6
|
作者：
GOBEL, U
WESEMANN, M
BENSCH, W
SCHLOGL, R
机构：
[1] UNIV FRANKFURT,INST ANORGAN CHEM,NIEDERURSELER HANG,W-6000 FRANKFURT 50,GERMANY
[2] MAX PLANCK GESELL,FRITZ HABER INST,W-1000 BERLIN 33,GERMANY
来源：
FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY | 1992年 / 343卷 / 07期
关键词：
D O I：
10.1007/BF00324819
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
Temperature and chemical state selective analysis of organic contaminants on Si(100) present after storage in air can be performed using thermal desorption spectroscopy (TDS). Samples stored for different times in air were characterized by XPS and then subjected to TDS. Hydrocarbon fragments were observed as well as a significant partial pressure of formaldehyde occurring as a decomposition product from higher molecular contaminants. Effects of treatment with HF and heating under reduced pressures of molecular oxygen were studied. The paper describes also some general analytical features of the technique.
引用
收藏
页码：582 / 592
页数：11
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