SI DEPTH PROFILE AND CONTAMINANTS IN SI-DOPED AL FILM

被引：6
|
作者：
CHANG, CC [1 ]
SHENG, TT [1 ]
SPEENEY, DV [1 ]
FRASER, DB [1 ]
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 05期
关键词：
D O I：
10.1063/1.322893
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1790 / 1794
页数：5
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