STUDY OF AVALANCHE MULTIPLICATION IN PLANAR-TERMINATED JUNCTIONS

The location of the maximum avalanche multiplication path in a planar terminated P+-N-junction using a deep lightly doped P--region moves from the surface to the edge region and finally to the plane region as the doping profile and dimensions of the P--termination junction are altered. The effects of the doping profile, junction depth, lateral dimensions and relative position of the P--terminating junction and oxide charges on the breakdown characteristics of planar terminated junction have been studied in the present work using 2-D solution of Poisson's equation with appropriate boundary conditions. The results here give a clear insight into the physical behaviour and are useful for designing these devices for higher breakdown voltage. © 1990.