SELF-ORGANIZED CRITICALITY AND FRACTAL GROWTH

被引:8
|
作者
ALSTROM, P [1 ]
机构
[1] HC ORSTED INST, PHYS LAB, DK-2100 COPENHAGEN 0, DENMARK
来源
PHYSICAL REVIEW A | 1990年 / 41卷 / 12期
关键词
D O I
10.1103/PhysRevA.41.7049
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Growth processes are argued to develop self-organized critical states. This new characterization of growth phenomena yields insight into the origin of fractal pattern formation, and the associated exponents give information on scaling properties beyond that provided by the usual multifractal description. As a major example, the dielectric-breakdown model is considered. The fractal dimension is estimated to be D=ln3/ln2 1.585 for =1. This value is compared with results obtained for different geometries and with values found when lattice effects are present. Also, the limiting cases 0 and are discussed. © 1990 The American Physical Society.
引用
收藏
页码:7049 / 7052
页数:4
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