GATE CURRENT DEPENDENCE OF LOW-FREQUENCY NOISE IN GAAS-MESFETS

被引：8
|
作者：
DAS, MD [1 ]
GHOSH, PK [1 ]
机构：
[1] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802
来源：
ELECTRON DEVICE LETTERS | 1981年 / 2卷 / 08期
关键词：
D O I：
10.1109/EDL.1981.25405
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：210 / 213
页数：4
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