THE ROLE OF SPIN-DEPENDENT IMPURITY SCATTERING IN FE/CR GIANT MAGNETORESISTANCE MULTILAYERS

被引:81
|
作者
BAUMGART, P
GURNEY, BA
WILHOIT, DR
NGUYEN, T
DIENY, B
SPERIOSU, VS
机构
[1] IBM Research Division, Almaden Research Center, San Jose, CA 95120-6099
关键词
D O I
10.1063/1.348231
中图分类号
O59 [应用物理学];
学科分类号
摘要
To probe the mechanism of giant magnetoresistance (GMR) observed in Fe/Cr multilayers, we have sputter deposited at the interfaces of Fe(15 angstrom)/Cr(12 angstrom) multilayers an additional, ultrathin (0-4 angstrom) layer of a variety of third elements (V, Mn, Ge, Ir, and Al). When alloyed with Fe in dilute concentrations, the elements chosen have known resistivities for spin-up (rho-up) and spin-down (rho-down) currents arising from spin-dependent impurity scattering. The results show a clear correlation between alpha = rho-down/rho-up of the respective element and the way in which GMR varies with the ultrathin layer thickness. In addition, little difference in GMR is observed between multilayers where the ultrathin layer thickness t/2 is deposited on every Fe/Cr interface and those with a thickness t deposited on alternate interfaces. This investigation demonstrates the importance of the type and total number of scattering centers per multilayer period to the GMR effect.
引用
收藏
页码:4792 / 4794
页数:3
相关论文
共 50 条