OBSERVATION OF DEFECT STRUCTURE IN ION IRRADIATED SIC CRYSTALS

被引:0
|
作者
HOJOU, K [1 ]
IZUI, K [1 ]
机构
[1] JAPAN ATOM ENERGY RES INST,DEPT CHEM,TOKAI,IBARAKI 31911,JAPAN
来源
JOURNAL OF ELECTRON MICROSCOPY | 1984年 / 33卷 / 03期
关键词
D O I
暂无
中图分类号
TH742 [显微镜];
学科分类号
摘要
引用
收藏
页码:273 / 274
页数:2
相关论文
共 50 条
  • [1] TEM observation of defect structure of low-energy ion implanted SiC
    Kameda, Toshimasa
    Tomita, Atsuo
    Matsui, Takaaki
    Isshiki, Toshiyuki
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 350 - 353
  • [2] Observation of metastable defect in electron irradiated 6H-SiC
    Hemmingsson, CG
    Son, NT
    Kordina, O
    Lindstrom, JL
    Janzen, E
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 561 - 564
  • [3] DIRECT OBSERVATION OF THE POINT-DEFECT STRUCTURE OF DEPLETED ZONES IN ION-IRRADIATED TUNGSTEN
    CURRENT, MI
    WEI, CY
    SEIDMAN, DN
    JOURNAL OF METALS, 1979, 31 (08): : F25 - F25
  • [4] Defect evolution in ion irradiated 6H-SiC epitaxial layers
    Ruggiero, A
    Zimbone, M
    Roccaforte, F
    Libertino, S
    La Via, F
    Reitano, R
    Calcagno, L
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 485 - 488
  • [5] Point defect production efficiency in ion irradiated 4H-SiC
    Calcagno, L.
    Ruggiero, A.
    Musumeci, P.
    Cuttone, G.
    La Via, F.
    Foti, G.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 257 : 279 - 282
  • [6] Observation of the Kibble–Zurek scaling law for defect formation in ion crystals
    S. Ulm
    J. Roßnagel
    G. Jacob
    C. Degünther
    S. T. Dawkins
    U. G. Poschinger
    R. Nigmatullin
    A. Retzker
    M. B. Plenio
    F. Schmidt-Kaler
    K. Singer
    Nature Communications, 4
  • [7] OBSERVATION OF DEFECT CLUSTERS IN IRRADIATED BEO
    RAU, RC
    JOURNAL OF APPLIED PHYSICS, 1965, 36 (08) : 2622 - &
  • [8] Time constant of defect relaxation in ion-irradiated 3C-SiC
    Wallace, J. B.
    Aji, L. B. Bayu
    Shao, L.
    Kucheyev, S. O.
    APPLIED PHYSICS LETTERS, 2015, 106 (20)
  • [9] Distribution of defect clusters in the primary damage of ion irradiated 3C-SiC
    Liu, C.
    Szlufarska, I.
    JOURNAL OF NUCLEAR MATERIALS, 2018, 509 : 392 - 400
  • [10] Defect-Induced Magnetism in Neutron Irradiated 6H-SiC Single Crystals
    Liu, Yu
    Wang, Gang
    Wang, Shunchong
    Yang, Jianhui
    Chen, Liang
    Qin, Xiubo
    Song, Bo
    Wang, Baoyi
    Chen, Xiaolong
    PHYSICAL REVIEW LETTERS, 2011, 106 (08)