COMPENSATION RATIOS AND ELECTRON-MOBILITY IN HIGH-PURITY N-INP - PHOTOLUMINESCENCE AND FAR-INFRARED STUDIES OF A NEW THEORETICAL RELATIONSHIP

被引：1
|
作者：
RIKKEN, GLJA
WYDER, P
CHAMBERLAIN, JM
GRIMES, RT
HALLIDAY, DP
机构：
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1988年 / 3卷 / 04期
关键词：
D O I：
10.1088/0268-1242/3/4/005
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：302 / 305
页数：4
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