SITE SYMMETRY AND DEFORMATION-POTENTIAL CONSTANTS OF AL-X ACCEPTORS IN SILICON

被引：7
|
作者：
CHANDRASEKHAR, HR [1 ]
RAMDAS, AK [1 ]
机构：
[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907
来源：
PHYSICAL REVIEW B | 1986年 / 33卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.33.1067
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：1067 / 1072
页数：6
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