MEASUREMENT OF THE LINEAR-POLARIZATION OF CHANNELING RADIATION IN SILICON AND DIAMOND

被引：5
|
作者：
RZEPKA, M
BUSCHHORN, G
DIEDRICH, E
KOTTHAUS, R
KUFNER, W
ROSSL, W
SCHMIDT, KH
HOFFMANNSTASCHECK, P
GENZ, H
NETHING, U
RICHTER, A
SELLSCHOP, JPF
机构：
[1] TH DARMSTADT,INST KERNPHYS,D-64289 DARMSTADT,GERMANY
[2] UNIV WITWATERSRAND,JOHANNESBURG 2050,SOUTH AFRICA
来源：
PHYSICAL REVIEW B | 1995年 / 52卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.52.771
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Utilizing 90 degrees Compton scattering the linear polarization of channeling radiation produced at the superconducting accelerator S-DALINAC with 62 MeV electrons in silicon and diamond has been measured in the energy range between 50 and 400 keV. Planar channeling radiation due to transitions involving transversal bound as well as unbound states is completely linearly polarized perpendicular to the channeling plane. Axial channeling radiation does not show linear polarization.
引用
收藏
页码：771 / 777
页数：7
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