MODELING OF GUNN DOMAIN EFFECTS IN THE OUTPUT CONDUCTANCE OF THE HIGH-FREQUENCY SMALL-SIGNAL GAAS-MESFET EQUIVALENT-CIRCUIT

被引：3
|
作者：
MAGERKO, MA
CHANG, K
机构：
[1] Department of Electrical Engineering, Texas A&M University, College Station, Texas
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1992年 / 5卷 / 14期
关键词：
GAAS MESFET MODELING; GUNN DOMAIN EFFECTS;
D O I：
10.1002/mop.4650051414
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A time-delay element associated with the output conductance has been included in the small-signal GaAs MESFET equivalent circuit to model Gunn domain effects. From experimental data collected to 36 GHz, these effects primarily contribute to decrease of the output conductance (g(ds)) with increasing frequency which significantly affects the magnitude of the S-parameter S22.
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页码：748 / 752
页数：5
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