Modulation of the effective work function of a TiN metal gate for NMOS requisition with Al incorporation

被引：7
|
作者：
Han Kai [1 ]
Ma Xueli [1 ]
Yang Hong [1 ]
Wang Wenwu [1 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2013年 / 34卷 / 07期
基金：
中国国家自然科学基金;
关键词：
work function modulation; Al; MOS capacitor; PMA;
D O I：
10.1088/1674-4926/34/7/076003
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effect of Al incorporation on the effective work function (EWF) of TiN metal gate was systematically investigated. Metal-oxide-semiconductor (MOS) capacitors with W/TiN/Al/TiN gate stacks were used to fulfill this purpose. Different thickness ratios of Al to TiN and different post metal annealing (PMA) conditions were employed. Significant shift of work function towards to Si conduction band was observed, which was suitable for NMOS and the magnitude of shift depends on the processing conditions.
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页数：4
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