CCD-BASED REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DETECTION AND ANALYSIS SYSTEM

被引：20

作者：

BARLETT, D

SNYDER, CW

ORR, BG

CLARKE, R

机构：

[1] Applied Physics Program, University of Michigan, Ann Arbor

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1991年 / 62卷 / 05期

关键词：

D O I：

10.1063/1.1142483

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A CCD-based, computer controlled RHEED detection and analysis system that utilizes an on-chip integration technique and on-board data manipulation is described. The system is capable of in situ time-resolved measurements of specular and integral-order intensity oscillations, their phase differences, streak linewidths, and epitaxial layer lattice constants. The digital RHEED techniques are described in the context of Co/Au bilayer, GaAs/GaAs, and In(x)Ga(1-x)As/GaAs MBE growth. The system is compared to other RHEED detection devices.

引用

页码：1263 / 1269

页数：7

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