共 50 条
- [1] Characterization of ZnSe/GaAs(001) heteroepitaxial interfaces by X-ray reflectivity measurement JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (6A): : 3475 - 3480
- [2] Strain nonuniformity in GaAs heteroepitaxial films on Si(001) studied by x-ray diffraction Journal of Applied Physics, 2007, 101 (01):
- [4] X-ray interface characterization of buried InAs layers on GaAs (001) PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1999, 215 (01): : 791 - 795
- [6] X-ray interface characterization of Ge delta layers on Si(001) PHYSICA B, 1996, 221 (1-4): : 96 - 100
- [7] X-ray topographic imaging and x-ray elastic measurements in the GaAs/Ge heteroepitaxial system MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 277 - 280
- [10] X-RAY STUDIES OF GAAS/SI AND ZNS/SI ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS, 1989, 144 : 323 - 328