STUDY OF PHOSPHORUS DIFFUSION IN SILICON BY NEUTRON-ACTIVATION ANALYSIS

被引：0
|
作者：
MURTI, MR
REDDY, KV
机构：
来源：
INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 1991年 / 29卷 / 01期
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D O I：
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Phosphorus diffusion in silicon single crystal has been studied by neutron activation analysis coupled with anodic oxidation sectioning. Concentration profiles were obtained under two different boundary conditions at temperatures 850 and 1100-degrees-C. The drive-in portion of the profile has been identified as that beyond square-root Dt1 where t1 is the predeposition time and is fitted to an appropriate form of error function. The diffusion coefficient obtained by this procedure agrees reasonably well with the reported values.
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页码：51 / 54
页数：4
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