RESONANT TUNNELING AND ESCAPE TIME IN GAAS-ALGAAS HETEROSTRUCTURES

被引：1
|
作者：
MEZAMONTES, L
RODRIGUEZ, MA
CARRILLO, JL
机构：
[1] Inst. de Fisica, Univ. Autonoma de Puebla
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期
关键词：
D O I：
10.1088/0268-1242/7/3B/116
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have calculated the tunnelling current in GaAl-AlxGa1-xAs heterostructures using non-equilibrium distribution functions. These functions are obtained by means of a set of rate equations for carrier and phonon dynamics which takes account of the fundamental scattering mechanisms in a semiconductor. We analyse the resonant tunnelling as well as the time evolution of the carrier population generated by a laser pulse in a well. In particular, we pay attention to the escape time and its dependence on the external parameters of excitation.
引用
收藏
页码：B450 / B452
页数：3
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