CALCULATION OF ULTRASLOW DIELECTRIC-RELAXATION OF DOPED BATIO3 CERAMICS

被引：0
|
作者：
SUN, HT
ZHANG, LY
YAO, X
机构：
[1] Electronic Materials Research Laboratory EMRL, Xi'an Jiaotong University, Xi'An
来源：
JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1992年 / 75卷 / 09期
关键词：
D O I：
10.1111/j.1151-2916.1992.tb05588.x
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Using a linear voltage ramp method, ultraslow dielectric relaxation processes of La-doped BaTiO3 boundary layer (BL) capacitors are measured at room temperature. For the electric polarization model of a double-layer dielectric, a procedure to calculate the electrical parameters of grain and grain boundary has been developed. Calculated results suggest that there is a shell on the surface of the grain. TEM images of the BL capacitor also show a lot of microregions with minor structural modifications. Relaxation times are estimated from the equivalent circuit and are in agreement with fitted results.
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页码：2379 / 2382
页数：4
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