ANISOTROPIES IN THE STRUCTURAL-PROPERTIES OF STRAINED (311) (IN,GA)AS/GAAS-HETEROSTRUCTURES

被引：1
|
作者：
MAZUELAS, A
ILG, M
JENICHEN, B
ALONSO, MI
PLOOG, KH
机构：
[1] Paul-Drude-lnstitut fOr, Festkôrperelektronik, Berlin, D-10117
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1995年 / 28卷 / 4A期
关键词：
D O I：
10.1088/0022-3727/28/4A/031
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigate the structural properties of (311) (In,Ga)As/GaAs-heterostructures by means of high-resolution x-ray diffractometry and topography. The low symmetry of the (311) orientation is shown to introduce shear strain. Furthermore, we observe strongly anisotropic diffraction patterns caused by the onset of strain relaxation in heavily strained (311) structures.
引用
收藏
页码：A159 / A163
页数：5
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