IMPURITY AND INTERIMPURITY RADIATIVE RECOMBINATION IN SILICON

被引：0

作者：

POKROVSKII, YE

SVISTUNO.KI

机构：

来源：

SOVIET PHYSICS SOLID STATE,USSR | 1965年 / 7卷 / 06期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1478 / +

页数：1

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[1] INFLUENCE OF TEMPERATURE AND IMPURITY-ABSORBED BACKGROUND ILLUMINATION ON INTERIMPURITY RADIATIVE RECOMBINATION IN SILICON
KAMINSKII, AS
POKROVSK.YE
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (12): : 1496 - +
[2] RADIATIVE INTERIMPURITY RECOMBINATION IN GERMANIUM
DOBREGO, VP
RYVKIN, SM
SHLIMAK, IS
[J]. SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (07): : 1689 - +
[3] INTERIMPURITY RADIATIVE RECOMBINATION IN COMPENSATED GERMANIUM
DOBREGO, VP
SHLIMAK, IS
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (10): : 1231 - +
[4] INTERIMPURITY RADIATIVE RECOMBINATION IN HEAVILY DOPED SEMICONDUCTORS
OSIPOV, VV
SOBOLEVA, TI
FOIGEL, MG
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (07): : 752 - 759
[5] KINETICS OF INTERIMPURITY RADIATIVE RECOMBINATION IN GALLIUM PHOSPHIDE
PIKHTIN, AN
YASKOV, DA
GLINSKII, GF
[J]. SOVIET PHYSICS SOLID STATE,USSR, 1970, 12 (02): : 307 - +
[6] THERMAL QUENCHING OF INTERIMPURITY RADIATIVE RECOMBINATION IN GERMANIUM
DOBREGO, VP
SHLIMAK, IS
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (04): : 455 - &
[7] INTERIMPURITY RADIATIVE RECOMBINATION IN PBI2
BRODIN, MS
BIBIK, VA
BLONSKII, IV
DAVYDOVA, NA
[J]. FIZIKA TVERDOGO TELA, 1990, 32 (02): : 403 - 408
[8] OBSERVATION OF INTERIMPURITY RECOMBINATION IN SILICON CARBIDE
VEINGER, AI
SHULEKIN, AF
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (01): : 113 - &
[9] RADIATIVE RECOMBINATION AT DEEP IMPURITY STATES IN SILICON CARBIDE
GORBAN, IS
SULEIMAN.UM
SHVAIDAK, YM
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (01): : 101 - &
[10] INFLUENCE OF UNIAXIAL COMPRESSION ON INTERIMPURITY RADIATIVE RECOMBINATION IN GERMANIUM
DOBREGO, VP
RYVKIN, SM
SHLIMAK, IS
[J]. SOVIET PHYSICS SOLID STATE,USSR, 1967, 9 (05): : 1131 - +

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