NEW FEATURES OF DARK AND PHOTOCONDUCTIVITY RESPONSE OF LOW-ENERGY AR+ ION BOMBARDED GAAS

被引：0
|
作者：
VASEASHTA, A
BURTON, LC
机构：
来源：
ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS | 1989年 / 147卷
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D O I：
10.1557/PROC-147-309
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：309 / 313
页数：5
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