SINGLE QUANTUM WELL LEAD-EUROPIUM-SELENIDE-TELLURIDE DIODE-LASERS

被引：2

作者：

PARTIN, DL ^{[1
]}

机构：

[1] GM CORP,RES LABS,DEPT PHYS,WARREN,MI 48090

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 12期

关键词：

D O I：

10.1109/T-ED.1984.21862

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1975 / 1975

页数：1

共 50 条

[1] SINGLE QUANTUM WELL LEAD-EUROPIUM-SELENIDE-TELLURIDE DIODE-LASERS
PARTIN, DL
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (05) : 487 - 489
[2] QUANTUM WELL DIODE-LASERS OF LEAD-EUROPIUM-SELENIDE-TELLURIDE
PARTIN, DL
MAJKOWSKI, RF
SWETS, DE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 576 - 580
[3] WAVELENGTH COVERAGE OF LEAD-EUROPIUM-SELENIDE-TELLURIDE DIODE-LASERS
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THRUSH, CM
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 193 - 195
[4] DIODE-LASERS OF LEAD-EUROPIUM-SELENIDE-TELLURIDE GROWN BY MOLECULAR-BEAM EPITAXY
PARTIN, DL
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 996 - 997
[5] LEAD-EUROPIUM-SELENIDE-TELLURIDE DIODE-LASERS GROWN BY MOLECULAR-BEAM EPITAXY
PARTIN, DL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1615 - 1615
[6] OUTPUT CHARACTERISTICS OF LEAD-TELLURIDE QUANTUM-WELL DIODE-LASERS
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BIELINSKI, JW
LO, W
PARTIN, DL
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1984, 1 (03) : 544 - 545
[7] LEAD SALT QUANTUM WELL DIODE-LASERS
PARTIN, DL
[J]. SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (02) : 131 - 135
[8] LEAD-EUROPIUM-SELENIDE-TELLURIDE GROWN BY MOLECULAR-BEAM EPITAXY
PARTIN, DL
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (03) : 493 - 504
[9] VISIBLE CW SINGLE QUANTUM WELL (ALGA)AS DIODE-LASERS
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BURNHAM, RD
SCIFRES, DR
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (02) : 134 - 136
[10] GROWTH AND CHARACTERIZATION OF LEAD-TIN-YTTERBIUM-TELLURIDE FOR DIODE-LASERS
PARTIN, DL
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (06) : 917 - 929

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