Surface modifications by gas cluster ion beams

被引：43
|
作者：
Yamada, I [1 ]
Matsuo, J [1 ]
Insepov, Z [1 ]
Akizuki, M [1 ]
机构：
[1] SANYO ELECT CO LTD, CTR MICROELECTR RES, GIFU 50301, JAPAN
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 106卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(95)00697-4
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
New aspects of surface treatment by gas cluster ion beams are discussed. Molecular dynamics simulation has shown that a considerably high damage region is formed at a depth exceeding the mean projected range of the implanted atoms. High yield sputtering has also been shown to occur with respect to lateral sputtering. Experiments on shallow implantation, high yield sputtering, surface smoothing and low damage surface cleaning were performed. The obtained results are compared with those of conventional monomer ion irradiation. Possible applications of ionized cluster beams to a new area of surface modifications are discussed.
引用
收藏
页码：165 / 169
页数：5
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