SILICON EPITAXIAL-GROWTH USING DICHLOROSILANE

被引：0

作者：

ROBINSON, PH ^{[1
]}

GOLDSMIT.N ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1974年 / 3卷 / 04期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：855 / 856

页数：2

共 50 条

[1] SILICON EPITAXIAL-GROWTH USING DICHLOROSILANE
ROBINSON, PH
GOLDSMITH, N
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (02) : 313 - 328
[2] EPITAXIAL-GROWTH OF SILICON FROM DICHLOROSILANE
LEKHOLM, A
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) : 1122 - &
[3] DICHLOROSILANE - SILICON SOURCE MATERIAL FOR EPITAXIAL-GROWTH
ROBINSON, PH
DAIELLO, RV
KRESSEL, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : C262 - C262
[4] DEFECT CONTROL DURING SILICON EPITAXIAL-GROWTH USING DICHLOROSILANE
BALIGA, BJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) : 1078 - 1084
[5] EPITAXIAL-GROWTH OF SILICON USING DICHLOROSILANE - GROWTH ON SINGLE-CRYSTAL HEMISPHERES
GOLDSMITH, N
ROBINSON, PH
[J]. RCA REVIEW, 1973, 34 (02): : 358 - 368
[6] SILICON EPITAXIAL-GROWTH VIA DICHLOROSILANE IN A BARREL REACTOR
CHIANG, YS
[J]. RCA REVIEW, 1977, 38 (04): : 500 - 511
[7] DEFECT REDUCTION BY DICHLOROSILANE EPITAXIAL-GROWTH
KULKARNI, SB
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C92 - C92
[8] VARIATION OF SIZE AND DENSITY OF PYRAMIDAL HILLOCK DURING EPITAXIAL-GROWTH OF SILICON USING DICHLOROSILANE GAS
MAZUMDER, MK
MASHIKO, Y
KOYAMA, H
TAKAKUWA, Y
MIYAMOTO, N
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (11) : 3956 - 3961
[9] SILICON EPITAXIAL-GROWTH
NISHIZAWA, JI
TERASAKI, T
SHIMBO, M
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 241 - +
[10] NUCLEATION IN EPITAXIAL-GROWTH OF SILICON
BLOEM, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1977, 38 (03) : 364 - 366

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