HIGH-FREQUENCY AVAILABLE POWER GAIN OF DIFFUSED-BASE TRANSISTORS

被引：0

作者：

KOZUMA, N

MIWA, I

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1962年 / 50卷 / 02期

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中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：199 / &

共 50 条

[1] HIGH-FREQUENCY AVAILABLE POWER GAIN OF A DIFFUSED-BASE TRANSISTOR
MIWA, I
[J]. ELECTRONICS & COMMUNICATIONS IN JAPAN, 1965, 48 (01): : 58 - &
[2] DIFFUSED-BASE AVALANCHE TRANSISTORS
FUKINO, K
KANI, K
[J]. ELECTRONICS & COMMUNICATIONS IN JAPAN, 1966, 49 (10): : 119 - &
[3] DIFFUSED-BASE PUNCHTHROUGH AVALANCHE TRANSISTORS
KANI, K
KAWAJI, A
FUKINO, K
[J]. ELECTRONICS & COMMUNICATIONS IN JAPAN, 1966, 49 (02): : 89 - &
[4] HIGH-FREQUENCY POWER GAIN OF JUNCTION TRANSISTORS
PRITCHARD, RL
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (09): : 1075 - 1085
[5] HIGH-FREQUENCY BREAKDOWN IN DIFFUSED TRANSISTORS - REPLY
CHOMA, J
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (11) : 1225 - &
[6] COMMENTS ON HIGH-FREQUENCY BREAKDOWN IN DIFFUSED TRANSISTORS
DAW, AN
CHOUDHURY, NK
MITRA, RN
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (11) : 1225 - +
[7] ALLOY-DIFFUSION - A PROCESS FOR MAKING DIFFUSED-BASE JUNCTION TRANSISTORS
BEALE, JRA
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1957, 70 (11): : 1087 - 1089
[8] MEASUREMENT CONSIDERATIONS IN HIGH-FREQUENCY POWER GAIN OF JUNCTION TRANSISTORS
PRITCHARD, RL
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (08): : 1050 - 1051
[9] A NEW HIGH-FREQUENCY DIFFUSED BASE TRANSISTOR
SARDELLA, J
WONSON, R
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (03): : 642 - 642
[10] A HIGH-FREQUENCY DIFFUSED BASE GERMANIUM TRANSISTOR
LEE, CA
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (01): : 23 - 34

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