IMPROVEMENT IN HGCDTE DIODE CHARACTERISTICS BY LOW-TEMPERATURE POSTIMPLANTATION ANNEALING

Hg1-xCdxTe diodes (x similar to 0.22) with different carrier concentrations in p type materials have been fabricated by employing an ion-implantation technique. The performances of the diodes, prior to and after low temperature postimplantation annealing, have been investigated in detail by model fitting, taking into account dark current mechanisms. Prior to the annealing process, dark currents for diodes with relatively low carrier concentrations are found to be limited by generation-recombination current and trap-assisted tunneling current, while dark currents for diodes with higher carrier concentrations are limited by band-to-band tunneling current. These dark currents in both diodes have been dramatically decreased by the low temperature annealing at 120 similar to 150 degrees C. From the model fitting analyses, it turned out that trap density and the density of the surface recombination center in the vicinity of the pn junction were reduced by one order of magnitude for a diode with lower carrier concentration and that the carrier concentration profile in a pn junction changed for a diode with higher carrier concentration. The improvements are explained by changes in both carrier concentration profile and pn junction position determined by interaction of interstitial Hg with Hg vacancy in the vicinity of the junction during the annealing process.