LOW-TEMPERATURE FORMATION OF SI(111)7X7 SURFACES FROM CHEMICALLY PREPARED H/SI(111)-(1 X-1) SURFACES

被引：29
|
作者：
VINH, LT
EDDRIEF, M
SEBENNE, CA
DUMAS, P
TALEBIBRAHIMI, A
GUNTHER, R
CHABAL, YJ
DERRIEN, J
机构：
[1] UNIV PARIS 11,LURE,F-91405 ORSAY,FRANCE
[2] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 24期
关键词：
D O I：
10.1063/1.111288
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Reflection high energy and low energy electron diffraction, along with high resolution photoemission studies reveal that ideally H-terminated Si(111) surfaces, H/Si(111)-(1 X 1) prepared by wet chemical etching, transform in ultrahigh vacuum into atomically clean Si(111)7 X 7 surfaces upon hydrogen desorption at temperatures as low as 550-degrees-C.
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页码：3308 / 3310
页数：3
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