PREPARATION AND CHARACTERIZATION OF (BI2S3)(1-X)(CDS)(X) SOLID-SOLUTION THIN-FILMS

被引：11
|
作者：
MISRA, S
PADHI, HC
机构：
[1] Institute of Physics
来源：
JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 09期
关键词：
D O I：
10.1063/1.355952
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Solid solution thin films of (Bi2S3)1-x(CdS)x for different compositions x = 0,0.35,0.60,0.81,1.0 are prepared for the first time by electroless deposition on glass and Si [111] substrates. Composition of the films has been measured using helium Rutherford backscattering method which are in good agreement with mole fraction of parent nitrate solutions used for the preparation. Scanning electron microscopy studies indicated formation of good quality films and.band-gap studies of the films confirmed the formation of solid solution. The band gaps of the samples of different compositions were found to vary linearly with composition, decreasing with increase in Bi2S3 atomic concentration.
引用
收藏
页码：4576 / 4580
页数：5
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