EXTRINSIC CONDUCTION IN MODIFIED GLASSY SEMICONDUCTORS

被引：0

作者：

GELMONT, BL

TSENDIN, KD

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1983年 / 17卷 / 06期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：655 / 657

页数：3

共 50 条

[1] MECHANISM OF EXTRINSIC CONDUCTION IN IRON-MODIFIED GLASSY ARSENIC SELENIDE
AVERYANOV, VL
LYUBIN, VM
NASREDINOV, FS
NISTIRYUK, PV
PRIKHODKO, OY
SEREGIN, PP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (02): : 223 - 225
[2] CONDUCTION IN GLASSY AND LIQUID SEMICONDUCTORS
MOTT, NF
DISCUSSIONS OF THE FARADAY SOCIETY, 1971, 1970 (50): : 7 - &
[3] The mechanism of electrical conduction in glassy semiconductors
Kurnosov, Arkady
Lubchenko, Vassiliy
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2025, 122 (10)
[4] POSSIBLE MECHANISM OF EXTRINSIC CONDUCTION IN LIQUID SEMICONDUCTORS
KAZANDZHAN, BI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (10): : 1322 - 1323
[5] MULTIQUANTUM ABSORPTION OF LIGHT BY CONDUCTION ELECTRONS IN EXTRINSIC SEMICONDUCTORS
MALEVICH, VL
EPSHTEIN, EM
OPTIKA I SPEKTROSKOPIYA, 1973, 35 (03): : 591 - 592
[6] DEGREE OF COMPENSATION OF GLASSY MODIFIED SEMICONDUCTORS
BARANOVSKII, SD
GELMONT, BL
TSENDIN, KD
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (10): : 1202 - 1203
[7] AC-CONDUCTION IN IRON BISMUTHATE GLASSY SEMICONDUCTORS
GHOSH, A
PHYSICAL REVIEW B, 1990, 42 (02): : 1388 - 1393
[8] MECHANISM OF EXTRINSIC CONDUCTIVITY IN MODIFIED VITREOUS SEMICONDUCTORS
AVERYANOV, VL
GELMONT, BL
KOLOMIETS, BT
LYUBIN, VM
PRIKHODKO, OY
TSENDIN, KD
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 64 (1-2) : 279 - 282
[9] Extrinsic conduction in Ge28.5Pb15S56.5 and Ge27Pb17Se56 glassy semiconductors
Bordovskii, G. A.
Castro, R. A.
Terukov, E. I.
TECHNICAL PHYSICS LETTERS, 2006, 32 (11) : 913 - 915
[10] Extrinsic conduction in Ge28.5Pb15S56.5 and Ge27Pb17Se56 glassy semiconductors
G. A. Bordovskiĭ
R. A. Castro
E. I. Terukov
Technical Physics Letters, 2006, 32 : 913 - 915

← 1 2 3 4 5 →