THE DEPOSITION AND CHARACTERIZATION OF BETA-SIC AND DIAMOND BETA-SIC COMPOSITE FILMS

被引：18
|
作者：
JIANG, X
KLAGES, CP
机构：
[1] Fraunhofer-Institut für Schicht- und Oberflächentechnik (FhG-IST), W-2000 Hamburg 54
来源：
DIAMOND AND RELATED MATERIALS | 1993年 / 2卷 / 2-4期
关键词：
D O I：
10.1016/0925-9635(93)90113-G
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Cubic silicon carbide (beta-SiC) was deposited by a microwave plasma assisted chemical vapor deposition (MWCVD) process, using a hydrogen-tetramethylsilane (TMS) gas mixture. The conditions for preparing beta-SiC correspond well with those for diamond deposition. The necessary silicon content in the gas phase for a beta-SiC growth rate comparable with normal diamond deposition is only 1% of the carbon required for diamond growth. Based on this knowledge a method for preparing diamond/beta-SiC composite film was developed and successfully realized. The experimental details are described and the growth mechanism is discussed.
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收藏
页码：523 / 527
页数：5
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