RADIATIVE RECOMBINATION OF CARRIERS IN SEMICONDUCTORS INVOLVING BINARY DEFECT COMPLEXES

被引：0

作者：

GEORGOBIANI, AN

GRUZINTSEV, AN

ZAYATS, AV

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1988年 / 22卷 / 12期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

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引用

页码：1355 / 1357

页数：3

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