MIS DIODES ON N-INP WITH TANTALUM OXIDE INTERFACIAL LAYER GROWN BY RAPID THERMAL-OXIDATION OF TANTALUM

被引：9
|
作者：
EFTEKHARI, G
机构：
[1] Department of Electrical Engineering, State University of New York, College, College at New Paltz, New York
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1994年 / 146卷 / 02期
关键词：
D O I：
10.1002/pssa.2211460233
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electrical properties of MIS InP diodes where the interfacial layer is prepared by electron beam evaporation of Ta and subsequent rapid thermal oxidation of evaporated Ta film are studied. Ta and Al are used as the gate metals. Compared with the case of no interfacial film between metal and InP, the barrier height increases by 0.22 and 0.12 eV for Ta and Al gate metals, respectively. The MIS diode with Ta gate metal shows good thermal stability. In the case of Al gate metal the thermal stability is poor.
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页码：867 / 871
页数：5
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