THEORY OF MAGNETORESISTANCE IN THE ANDERSON-LOCALIZED REGIME OF SEMICONDUCTORS

被引：12
|
作者：
KUROBE, A [1 ]
机构：
[1] UNIV TOKYO,FAC SCI,DEPT PHYS,BUNKYO KU,TOKYO 113,JAPAN
来源：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1986年 / 19卷 / 13期
关键词：
D O I：
10.1088/0022-3719/19/13/011
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：2201 / 2216
页数：16
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