INFLUENCE OF MICROWAVE-HEATING ON DISLOCATION PHOTOLUMINESCENCE IN PLASTICALLY DEFORMED GERMANIUM

The effect of an X-band microwave electric field on the dislocation photoluminescence (DPL) in Ge is investigated. The influence of microwaves on the DPL depends strongly on the orientation of the microwave electric field E(omega) relatively to the glide plane, active during the plastic deformation. Comparing the data for E(omega) perpendicular and parallel to the glide plane, the influence of the microwave heating of 1 D carriers in the dislocation bands and the 3D carriers', can be separated. It is found that the heating of 3D carriers leads to opposite effects on the DPL intensity in n- and p-type samples. On the contrary, the heating of 1D carriers results in an increase of the high-energy side of the DPL lines irrespective of doping. The obtained results give an additional argument in favor of the conclusion that the DPL corresponds to regular segments of dislocations rather than dislocation defects. A model to account for the obtained results is presented.